High voltage low current surface-emitting led

ABSTRACT

A monolithic LED chip is disclosed comprising a plurality of junctions or sub-LEDs (“sub-LEDs”) mounted on a submount. The sub-LEDs are serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of serially interconnected sub-LEDs and the junction voltage of the sub-LEDs. Methods for fabricating a monolithic LED chip are also disclosed with one method comprising providing a single junction LED on a submount and separating the single junction LED into a plurality of sub-LEDs. The sub-LEDs are then serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of the serially interconnected sub-LEDs and the junction voltage of the sub-LEDs.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to light emitting diode (LED) chips and inparticular LED chips having multiple series connected junctionsinterconnected to allow for high voltage and low current operation.

2. Description of the Related Art

Light emitting diodes (LED or LEDs) are solid state devices that convertelectric energy to light, and generally comprise one or more activelayers of semiconductor material sandwiched between oppositely dopedlayers. When a bias is applied across the doped layers, holes andelectrons are injected into the active layer where they recombine togenerate light. Light is emitted from the active layer and from allsurfaces of the LED.

In order to use an LED chip in a circuit or other like arrangements, itis known to enclose an LED chip in a package to provide environmentaland/or mechanical protection, color selection, light focusing and thelike. An LED package can also include electrical leads, contacts ortraces for electrically connecting the LED package to an externalcircuit. FIG. 1 shows a conventional LED package that generallycomprises a single LED chip 12 mounted on a reflective cup 13 by meansof a solder bond or conductive epoxy. One or more wire bonds 11 connectthe ohmic contacts of the LED chip 12 to leads 15A and/or 15B, which maybe attached to or integral with the reflective cup 13. The reflectivecup 13 can be filled with an encapsulant material 16 which can contain awavelength conversion material such as a phosphor. Light emitted by theLED at a first wavelength can be absorbed by the phosphor, which canresponsively emit light at a second wavelength. The entire assembly isthen encapsulated in a clear protective resin 14, which may be molded inthe shape of a lens over the LED chip 12.

FIG. 2 shows another conventional LED package 20 that may be more suitedfor high power operations that can generate more heat. In the LEDpackage 20, one or more LED chips 22 are mounted onto a carrier such asa printed circuit board (PCB) carrier, substrate or submount 23. Areflector 24 can be included on the submount 23 that surrounds the LEDchip(s) 22 and reflects light emitted by the LED chips 22 away from thepackage 20. Different reflectors can be used such as metal reflectors,omni-directional reflectors (ODRs), and distributed Bragg reflectors(DBRs). The reflector 24 can also provide mechanical protection to theLED chips 22. One or more wirebond connections 11 are made between ohmiccontacts on the LED chips 22 and electrical traces 25A, 25B on thesubmount 23. The mounted LED chips 22 are then covered with anencapsulant 26, which may provide environmental and mechanicalprotection to the chips while also acting as a lens. The metal reflector24 is typically attached to the carrier by means of a solder or epoxybond.

Many LED components for solid state lighting applications attempt toachieve high light output by operating single LED chips at as high aspossible current and at a low voltage typical for individual LEDs. FIGS.3 and 4 show one commercially available LED 30 available from Cree® Inc.under the EZ700™ LED product designation. The LED comprises a single LEDjunction 32 as welt as a current spreading structure 34 on its top tospread current from the top contact 36. Current spreading layers canalso be included. The particular voltage level for these types of singlejunction LED chips can be dependant upon the particular material systemused for the LEDs and the voltage necessary based on junction voltage.For example, some Group-III nitride based LEDs can have junction voltagein the 2.5 to 3.5 volt range and increased luminous flux for these LEDscan be achieved by applying elevated current levels. One disadvantage ofthis approach is that at the systems level high current operationnecessitates relatively expensive drivers to provide the constant DCcurrent source for such components. Further, there can be limits to thelevel of current that can be applied to these LED chips and if thesingle junction fails, the chip can be unusable.

Higher light output can be achieved at the assembly level by mountingseveral LED packages onto a single circuit board. FIG. 5 shows asectional view of one such distributed integrated LED package array 50comprising a plurality of LED packages 52 mounted to asubstrate/submount 54 to achieve higher luminous flux. Typical arraysinclude many LED packages, with FIG. 5 only showing two for ease ofunderstanding and illustration. Alternatively, higher flux componentshave been provided by utilizing arrays of cavities, with a single LEDchip mounted in each of the cavities. (e.g. TitanTurbo™ LED LightEngines provided by Lamina, Inc.). This multiple LED componentarrangement can also allow for operation under high voltage and lowcurrent by assembling the multiple LED packages of a suitable currentrating in series at the circuit board level. Driving solid statelighting components at high voltage and low currents may provide forlower cost driver solutions and ultimately lower system costs. However,the lower driver cost for such solutions can be outweighed by the highcost of the multiple individual components.

These LED array solutions can be less compact than desired as theyprovide for extended non-light emitting “dead space” between adjacentLED packages and cavities. This dead space provides for larger devices,and can limit the ability to shape the output beam by a single compactoptical element like a collimating lens or reflector into a particularangular distribution. This makes the construction of solid statelighting luminares that provide for directed or collimated light outputwithin the form factor of existing lamps or even smaller difficult toprovide. This can present challenges in providing a compact LED lampstructure incorporating an LED component that delivers light flux levelsin the 1000Lumen and higher range from a small optical source.

SUMMARY OF THE INVENTION

One embodiment of a monolithic LED chip according to the presentinvention comprises a plurality of junctions or sub-LEDs (“sub-LEDs”)mounted on a submount. The sub-LEDs are serially interconnected suchthat the voltage necessary to drive the plurality of sub-LEDs isdependent on the number of serially interconnected sub-LEDs and thejunction voltage of the sub-LEDs.

One embodiment according to the present invention for fabricating amonolithic LED chip comprises providing a single junction LED on asubmount and separating the single junction LED into a plurality ofsub-LEDs. The sub-LEDs are then serially interconnected such that thevoltage necessary to drive the plurality of sub-LEDs is dependent on thenumber of the serially interconnected sub-LEDs and the junction voltageof the sub-LEDs.

One embodiment of an LED chip according to the present inventioncomprises a plurality of sub-LEDs mounted on a submount, wherein thesub-LEDs are formed from a single junction LED. Electrically conductiveand electrically insulating features serially interconnect the sub-LEDssuch that an electrical signal applied to the serially interconnectedsub-LEDs along the electrically conductive features spreads to theserially interconnected sub-LEDs

Another embodiment of an LED chip according to the present inventioncomprises a plurality of sub-LEDs mounted on a submount. A plurality ofbottom contacts are included, each of which is between one of thesub-LEDs and the submount. Connector traces serially interconnect thesub-LEDs and insulating features insulate portions of the sub-LEDs fromthe connector traces.

Still another embodiment of an LED chip according to the presentinvention comprises a plurality of sub-LEDs mounted on a submount. Thesub-LEDs are separated by isolation implants and the sub-LEDs areserially interconnected.

These and other aspects and advantages of the invention will becomeapparent from the following detailed description and the accompanyingdrawings which illustrate by way of example the features of theinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a sectional view of a prior art LED package;

FIG. 2 shows a sectional view of another prior art LED package;

FIG. 3 shows a top view of a prior art LED chip according to the presentinvention;

FIG. 4 is a side elevation view of the LED chip in FIG. 3;

FIG. 5 is a sectional view of a prior art LED package according to thepresent invention;

FIG. 6 is a top view of one embodiment of a monolithic LED chipaccording to the present invention.

FIG. 7 is a sectional view of the monolithic LED chip of FIG. 6 takenalong section lines 7-7;

FIG. 8 is a schematic showing the interconnections in the LED chip inFIG. 6;

FIG. 9 is a schematic showing the interconnections between anotherembodiment of and LED chip according to the present invention;

FIG. 10 is a schematic showing the interconnections between anotherembodiment of and LED chip according to the present invention;

FIG. 11 is a schematic showing the interconnections between anotherembodiment of and LED chip according to the present invention;

FIG. 12 is a sectional view of another embodiment of a monolithic LEDchip according to the present invention;

FIG. 13 is a sectional view of another embodiment of a monolithic LEDchip according to the present invention;

FIG. 14 is a sectional view of another embodiment of a monolithic LEDchip according to the present invention;

FIG. 15 is a sectional view of still another embodiment of a monolithicLED chip according to the present invention; and

FIG. 16 is a top view of a monolithic LED chip according to the presentinvention having one failed junction or sub-LED.

DETAILED DESCRIPTION OF THE INVENTION

The present invention comprises a monolithic LED chip or componenthaving a plurality of LED junctions or sub-LEDs mounted onto asubstrate/submount (“submount”) to create a single compact opticalsource element. As used in the present application, monolithic refers toLED chips wherein the emitters are mounted on one substrate or submount.According to the present invention, at least some of the junctions orsub-LEDs are arranged on the submount, with different embodimentsproviding multiple series interconnections, or combinations ofseries/parallel interconnections. The LED chips according to the presentinvention can emit different colors of light, with some embodimentsemitting white light.

In one embodiment, an LED chip is provided having the same dimensions orfootprint as a conventional high output single junction LED that useslow voltage and high current operation to provide high luminous fluxoperation. The active area of this type of conventional LED chipsubstantially covers its submount. According to the present invention,this area is divided into a plurality of junctions or sub-LEDs(“sub-LEDs”) using different methods, such as a standard etching,photolithography, or ion implanting. Combinations of electricallyconductive interconnects and insulating features can be provided tointerconnect the sub-LEDs in series on the submount.

Since electrical power is provided at high AC voltage, operatingconventional single junction LEDs and LED lighting systems from the gridrequires some type of transformer and converter circuitry, which can becostly, bulky and lossy. The present invention provides for a novel LEDchip architecture that is designed to operate at a high voltage and lowcurrent rather than the existing low voltage and high currentconfiguration. An equivalent overall LED performance can be maintained,while at the same time maintaining the overall size of the LED chip andthe requirements for contacting the LED chip. Equivalent performance isachieved by incorporating the functional elements of the existing singlejunction LED chip into each sub-LED and its junction. The high voltageand low current operation is achieved by connecting the individualsub-LEDs in series on the same submount used for a single junction LEDchip. Preferably, the individual sub-LEDs are densely packed to maximizethe active emission area for a given chip footprint. In one embodimentaccording to the present invention, the alignment tolerance between andcritical dimension of each fabrication level is 2 um or less so thatlittle active area is wasted between adjacent junctions.

The number of sub-LEDs can be tailored or customized to meet theavailable voltage level or the voltage level can be tailored to meet thenumber of junctions presented by the sub-LEDs. The number of sub-LEDs ona submount can be as little as three or in the hundreds depending on theavailable operating voltage. The LED chip operating voltage can betailored for the end application by selecting the appropriate number andsize of sub-LEDs per chip. For example, a 16×225 μm×225 μm multiplesub-LED device operating at 50 volts and 22 mA (e.g. with 15 sub-LEDs),can operate with the same output characteristics as a similar sizedsingle junction device operating at 3 V and 350 mA.

The present invention can be used to fabricate many different LED chipshaving essentially the same size and footprint of many commerciallyavailable single junction LED chips, such as the EZ Bright® EZ700 andEZ1000 LED chips commercially available from Cree® Inc. The EZ700 canhave a chip area of approximately 680×680 μm and an active junction areaof approximate 650×650 μm. The EX1000 LED chips can have an having achip area of approximately 980×980 μm and an active junction area ofapproximate 950×950 μm. Both these are commercially provided with asingle junction, and according to the present invention this singlejunction arrangement can instead be provided as multiple sub-LEDs thatcan then serially interconnected.

A different number of sub-LEDs, and therefore target operating voltageand current, can be achieved simply by changing the fabrication masklayout for forming the sub-LEDs and conductive interconnects, whilekeeping the same fabrication process. For example, a monolithic LED chipaccording to the present invention can have 20 serially connectedsub-LEDs. Different material systems for each of the sub-LEDs canpresent different sub-LED junction voltages. For Group-III nitridesub-LEDs a driving voltage of approximately 60 volts (or 3 volts perjunction) can be used with an operating current of approximately 20 mA.In still other applications using U.S. grid power of approximately 150volts (peak to valley), the monolithic LED chip can comprise 50 seriallyconnected sub-LEDs at 3 volts per junction. For European grid power ofover approximately 350 volts (peak to valley) the monolithic chip cancomprise over 100 serially connected sub-LEDs. A high voltage and lowcurrent LED chip allows for the use of more efficient driver circuitryin high power lighting systems.

Different embodiments of monolithic LED chips according to the presentinvention can also comprise more than one group of series connectedsub-LEDs on a single submount. This can require two voltages of the sameor different level to be applied to the submount to drive the seriesconnected sub-LED, depending on the number of sub-LEDs in each seriallyconnected string. Other embodiments can comprise different combinationsof series and parallel interconnected sub-LEDs. In still otherembodiments, LED chips can be provided with the sub-LED already etched,and the operating voltage can be determined based on the number ofsub-LEDs that are interconnected in series. This allows for a standardLED-chip with a standard number of sub-LEDs to be provided, with the LEDchips having different interconnects to serially connect some or all ofthe sub-LEDs to achieve the desired operating voltage. This approach,however, can result in less than all of the sub-LEDs being utilized onthe LED chip.

The embodiments according to the present invention differ from theconventional LED chip architecture and technology in a number of ways.The present invention allows for breaking up a single junction LED intotwo or many more serially connected sub-LEDs on a monolithicsurface-emitting chip. Each of the sub-LEDs can be electrically isolatedfrom the others (apart from the traces), by different combination ofelectrical conducting and electrically insulating layers and features.In different embodiments this isolation may also require inserting anelectrical insulator layer between the junctions and the conductivesubmount or backside metallization, and creating individual ohmiccontacts to each junction.

Still another advantage of the multi-junction design is that the processyield (good dice per wafer) may increase due to its inherent defecttolerance. While a single shorting junction defect would fail a singlejunction device, the same shorting defect on one of the junctions in amulti-junction device would fail only an individual junction. Theelectrical signal would pass through the defective junction and althoughthe defective junction would not emit light, the remaining junctionswould operate normally. All else being equal, the higher yield allowedby the present invention can reduce the cost of LED lighting on a lumensper dollar basis.

Further, compared to the alternative of stringing multiple small LEDchips or LED packages in series to achieve high voltage/low currentoperation at the system level (e.g. a light bulb), the invention allowsfor significantly smaller source size by having the emitting junctionscloser. This results in a source that more closely resembles a pointsource, allowing for greater efficiency and flexibility in the design ofsecondary optics to control the radiation pattern. Another advantage isthat by using power signals to drive the monolithic chip that are closerto the conventional grid power, losses in converting the grid power canbe reduced. Different embodiments according to the present invention canresult in up to a 7 percent increase in system operating efficiency as aresult of reduced conversion losses alone. The present invention alsoallows for reduction in the size of the conversion drive circuitry,which in turn reduces the overall size of the emitter package or solidstate lighting package.

The present invention can be utilized at the LED chip level to replacesingle junction LED chips with series connected multiple junction LEDchips. Alternatively, the present invention can be applied to largerarea applications, such as the formation of series connection multipleLEDs, sub-LEDs or junctions at the wafer level or at portions of thewafer. The amount of area can depend on different factors such as thedesired operating voltage and area to be covered by the differentjunctions. Different embodiments of the present invention can also havesub-LEDs covering different areas of the wafer or submount at the LEDchip level.

The present invention is described herein with reference to certainembodiments, but it is understood that the invention can be embodied inmany different forms and should not be construed as limited to theembodiments set forth herein. In particular, the present invention isdescribed below in regards to multiple serially connected sub-LEDs indifferent configurations, but it is understood that the presentinvention can be used many other configurations. The sub-LEDs anddifferent components can have different shapes and sizes beyond thoseshown and different numbers of sub-LED can be included in the array.Some or all of the sub-LEDs can be coated with a down-converter coatingthat can comprise a phosphor loaded binder (“phosphor/binder coating”).

It is also understood that when an element such as a layer, region orsubstrate is referred to as being “on” another element, it can bedirectly on the other element or intervening elements may also bepresent. Furthermore, relative terms such as “inner”, “outer”, “upper”,“above”, “lower”, “beneath”, and “below”, and similar terms, may be usedherein to describe a relationship of one layer or another region. It isunderstood that these terms are intended to encompass differentorientations of the device in addition to the orientation depicted inthe figures.

Although the terms first, second, etc. may be used herein to describevarious elements, components, regions, layers and/or sections, theseelements, components, regions, layers and/or sections should not belimited by these terms. These terms are only used to distinguish oneelement, component, region, layer or section from another region, layeror section. Thus, a first element, component, region, layer or sectiondiscussed below could be termed a second element, component, region,layer or section without departing from the teachings of the presentinvention.

Embodiments of the invention are described herein with reference tocross-sectional view illustrations that are schematic illustrations ofembodiments of the invention. As such, the actual thickness of thelayers can be different, and variations from the shapes of theillustrations as a result, for example, of manufacturing techniquesand/or tolerances are expected. Embodiments of the invention should notbe construed as limited to the particular shapes of the regionsillustrated herein but are to include deviations in shapes that result,for example, from manufacturing. A region illustrated or described assquare or rectangular will typically have rounded or curved features dueto normal manufacturing tolerances. Thus, the regions illustrated in thefigures are schematic in nature and their shapes are not intended toillustrate the precise shape of a region of a device and are notintended to limit the scope of the invention.

FIG. 6 and 7 show one embodiment of a high voltage and low currentmonolithic LED chip 60 according to the present invention comprisingmultiple serially connected sub-LEDs 62 a-c mounted on submount 64. Itis understood that in other embodiments, the submount 64 can comprise agrowth substrate for the LED chip 60. This embodiment is directed to amonolithic LED chip 60 that is used instead of a single junction LEDchip (e.g. as shown in FIGS. 3 and 4) that have an active areasubstantially covering the submount 64. The multiple serially connectedsub-LEDs 62 a-c are arranged to cover the same surface area or footprintof the single junction LED, except that a certain portions of the activearea may be removed to separate the sub-LEDs 62 a-c, and to allow forserial connection of the sub-LEDs 62 a-c. Although only three sub-LEDs62 a-c are shown it is understood that two or many more sub-LEDs can beincluded depending on different factors such as the desired operatingvoltage. As mentioned above, the present invention and the embodimentsdescribed herein are equally applicable to larger area arrangements,such as at the wafer level or portions of the wafer.

FIG. 8 shows a schematic one embodiment of the serial interconnectionsbetween the sub-LEDs 62 a-c in the LED chip 60. As mentioned above, manymore LED chips can be provided in different series and parallelinterconnections. FIG. 9 shows a schematic of another embodiment of anLED chip 90 according to the present invention having more than threeserially connected sub-LEDs 92. FIG. 10 shows a schematic of anotherembodiment of an LED chip 93 according to the present invention havingtwo series connected strings of sub-LED chips 94 connected in parallelbetween a single input and output contact points 95 a, 95 b. FIG. 11shows a schematic of still another embodiment of an LED chip 96according to the present invention comprising two series connectedstrings of LED chips 98 both having their own input and output contactpoints 99 a, 99 b. These are only a few of the many different series andparallel arrangements that can be provided in the LED chips according tothe present invention.

Referring again to FIGS. 6 and 7, each of the sub-LEDs 62 a-c can havethe similar features and characteristics as a single junction LED thatcovers the entire submount 64. The sub-LEDs 62 a-c can have manydifferent semiconductor layers arranged in different ways. Thefabrication and operation of the layers that comprise LEDs and sub-LEDs62 a-c, is generally known in the art and only briefly discussed herein.The layers of the sub-LEDs 62 a-c can be fabricated using knownprocesses with a suitable process being fabrication using metal organicchemical vapor deposition (MOCVD). The layers of the sub-LEDs 62 a-cgenerally comprise an active layer/region sandwiched between first andsecond oppositely doped epitaxial layers all of which are formedsuccessively on a growth substrate.

It is understood that additional layers and elements can also beincluded in each of the sub-LEDs 62 a-c, including but not limited tobuffer, nucleation, contact and current spreading layers as well aslight extraction layers and elements. It is also understood that theoppositely doped layers can comprise multiple layers and sub-layers, andwell as supper lattice structures and inter layers. The active regioncan comprise single quantum well (SQW), multiple quantum well (MQW),double heterostructure or super lattice structures. The order of thelayers can be different and in the embodiment shown, the first or bottomepitaxial layer can be an n-type doped layer and the second or topepitaxial layer can be a p-type doped layer, although in otherembodiments the first layer can be p-type doped and the second layern-type doped. Embodiments where the p-type layer is the bottom layertypically correspond with sub-LEDs that are flip-chip mounted on thesubmount 64. In flip-chip embodiments it is understood that the toplayer can be the growth substrate, and in different embodiments all or aportion of the growth substrate can be removed. In those embodimentswhere the growth substrate is removed, the n-type doped layer is exposedas the top surface. In still other embodiments portions of the growthsubstrate can be left on the sub-LEDs 62 a-c and in some embodiments canbe shaped or textured to enhance light extraction.

The layers of the sub-LEDs 62 a-c may be fabricated from differentmaterial systems, with preferred material systems being Group-IIInitride based material systems. Group-III nitrides refer to thosesemiconductor compounds formed between nitrogen and the elements in theGroup III of the periodic table, usually aluminum (Al), gallium (Ga),and indium (In). The term also refers to ternary and quaternarycompounds such as aluminum gallium nitride (AlGaN) and aluminum indiumgallium nitride (AlInGaN). In one embodiment according to the presentinvention, the n- and p-type layers are gallium nitride (GaN) and theactive region is InGaN, but it is understood that these embodiment mayinclude additional layers with different compositions such as AlGaNbuffer layers, supper lattice structures with GaN/InGaN layers, and caplayers comprising AlGaN. In alternative embodiments the n- and p-typelayers may be AlGaN, aluminum gallium arsenide (AlGaAs) or aluminumgallium indium arsenide phosphide (AlGaInAsP). Different compositions ofGroup-III nitride material systems can have different junction voltages,such as in the range of 2.5 to 3.5 volts.

The sub-LED growth substrate (not shown) can be made of many materialssuch at sapphire, silicon, silicon carbide, aluminum nitride (AlN), GaN,with a suitable substrate being a 4H polytype of silicon carbide,although other silicon carbide polytypes can also be used including 3C,6H and 15R polytypes. Silicon carbide has certain advantages, such as acloser crystal lattice match to Group III nitrides than sapphire andresults in Group III nitride films of higher quality. Silicon carbidealso has a very high thermal conductivity so that the total output powerof Group-III nitride devices on silicon carbide is not limited by thethermal dissipation of the substrate (as may be the case with somedevices formed on sapphire). SiC substrates are available from CreeResearch, Inc., of Durham, N.C. and methods for producing them are setforth in the scientific literature as well as in a U.S. Pat. Nos. Re.34,861; 4,946,547; and 5,200,022.

Each of the sub-LEDs 62 a-c can have first and second contacts and inthe embodiment shown the sub-LEDs 62 a-c have vertical geometry. Asdescribed below, the sub-LEDs 62 a-c can be contacted on their topsurface and on their bottom surface as in conventional vertical geometrydevices. As further described below in other embodiments, the presentinvention can also be used with LEDs having lateral geometry wherein thesub-LEDs can be contacted from one side or surface of the sub-LEDs,instead of top and bottom surfaces as is the case for vertical geometry.The first and second contacts can comprise many different materials suchas Au, copper (Cu) nickel (Ni), indium (In), aluminum (Al), silver (Ag),or combinations thereof. In still other embodiments can compriseconducting oxides and transparent conducting oxides such as indium tinoxide, nickel oxide, zinc oxide, cadmium tin oxide, titanium tungstennickel, indium oxide, tin oxide, magnesium oxide, ZnGa₂O₄, ZnO₂/Sb,Ga₂O₃/Sn, AgInO₂/Sn, In₂O₃/Zn, CuAlO₂, LaCuOS, CuGaO₂ and SrCu₂O₂. Thechoice of material used can depend on the location of the contacts aswell as the desired electrical characteristics such as transparency,junction resistivity and sheet resistance.

Some embodiments of sub-LEDs 62 a-c can have other features andGroup-III nitride based sub-LEDs for example, can have other features toassist in spreading current from the contacts. This is particularlyapplicable to spreading current into p-type Group-III nitrides and thecurrent spreading structure can comprise thin semitransparent currentspreading layer covering some or the entire p-type layer. These layerscan comprise different materials including but not limited to a metalsuch as platinum (Pt) or a transparent conductive oxide such as indiumtin oxide (ITO).

As mentioned above, the sub-LEDs 62 a-c in the embodiment shown areflip-chip mounted to the submount 64. This can occur at the wafer levelor at the chip level. For flip-chip mounting at the wafer level manywafer bonding techniques can be used and in the embodiment shown a metalbond stack 68 is included between the sub-LEDs 62 a-c and the submount64, with one or more layers of the metal bond stack 68 being on thesub-LEDs 62 a-c and one or more layers being on the submount 64. Whenthe sub-LEDs 62 a-c are flip chip mounted to the submount 64, the metallayers from the sub-LEDs 62 a-c come in contact with the metal layersfrom the submount 64. Sufficient heat is applied to cause the metallayers to bond together and when the heat is removed the sub-LEDs 62 a-care held by the metal bond stack 68 to the submount 64. Bond stacklayers can be made of different materials such as Ni, Au and Sn, orcombinations thereof. Following wafer level bonding, the LED chips 60can be singulated from the wafer. It is understood that this flip-chipbonding can also occur at the LED chip level or at portions of the waferlevel.

The submount 64 can be formed of many different materials such assilicon, ceramic, alumina, aluminum nitride, silicon carbide, sapphire,or a polymeric material such as polymide and polyester etc. In otherembodiments the submount 64 can include a highly reflective material,such as reflective ceramics, dielectrics or metal reflectors likesilver, to enhance light extraction from the component. In otherembodiments the submount 64 can comprise a printed circuit board (PCB),or any other suitable material, such as T-Clad thermal clad insulatedsubstrate material, available from The Bergquist Company of Chanhassen,Minn. For PCB embodiments different PCB types can be used such asstandard FR-4 metal core PCB, or any other type of printed circuitboard.

As described above, in conventional low voltage and high current singlejunction LED chips, the LED active layers can be continuous across allor most of submount 64 such that a single junction single LED isprovided. An electrical signal is the applied to the single LED in someembodiments with the help of current spreading structures and features.In the LED chip 60, the single junction LED chip is separated intomultiple sub-LEDs 62 a-c on an insulator layer 70 (described below).Many different methods can be used to accomplish this separation and inone embodiment portions of the continuous LED layers can be etched awayusing known etching techniques to provide physical separation betweenthe sub-LEDs 62 a-c. In other embodiments, portions can be removed usingknown photolithography techniques. In one embodiment portions of the LEDactive region and doped layers are being etched down to the insulator 70to form the open areas between adjacent LEDs 62 a-c. In otherembodiments, the sub-LEDs can be separated from the single junction LEDprior to mounting to the submount 64.

It is understood that the greater the number of sub-LEDs 62 a-c resultsin a greater number of openings formed between sub-LEDs. With eachopening a portion of the emitting active area is removed, such thatthere can be less active area for the LED chip compared to singlejunction devices covering the same area. There is typically acorresponding reduction in active emission area with the greater thenumber of sub-LEDs. This reduction in active emission area can result ina corresponding increase in current density and reduction in lightemission from the LED chip. The greater the reduction in the activeemission area, the smaller that active area utilization ratio (i.e.ratio of active area for sub-LED device compared to the LED footprint).To minimize this reduction in emission area, the alignment tolerancesbetween sub-LEDs should be as small as possible such that the amount ofactive area that is removed between sub-LEDs is as small as possible.The alignment tolerances between sub-LEDs should be less than 5 microns,with preferred tolerances being less than 2 microns. The active areautilization ratio should be greater than 50%, with suitable embodimentshave an active area utilization ratio greater than 75%.

In the embodiment shown, the sub-LEDs 62 a-c are connected in series sothat a signal applied to the first sub-LED 62 a passes through to theremaining serially connected sub-LEDs 62 b, 62 c. To allow for this typeof serial connection, the sub-LEDs 62 a-c are electrically insulatedfrom the conductive features below, such as the metal bond stack 68. Inother embodiments, the submount 64 can also be conductive, such that theLEDs 62 a-c should also be insulated from the submount 64. To providethis electrical insulation, a substrate insulator layer 70 can beincluded between the sub-LEDs 62 a-c and the bond metal stack 68, aswell as the submount 64 below. The substrate insulator layer 70 can bedeposited on the sub-LEDs 62 a-62 c using conventional methods and canbe deposited prior to flip-chip mounting of the sub-LEDs 62 a-c on thesubmount 64 and prior to deposition of the metal bond layers 68. Theinsulating layer 70 can be made of many different insulating materialsincluding but not limited to silicon nitride (SiN), aluminum nitride(AlN), silicon dioxide (SiO₂), titanium dioxide (TiO₂), or aluminumoxide (Al₂O₃). In some embodiments, the insulating layer 70 can also actas an etch stop layer for the etch used to separate the single LEDjunction into multiple sub-LEDs.

The insulating layer 70 can have many different thicknesses, with thethickness being sufficient to withstand the voltage applied to theserially connected sub-LEDs 62 a-c. For example, for an LED chipembodiment having 50 volts applied to its sub-LEDs can have a SiNinsulating layer thickness of 1,000 to 10,000 angstroms (Å). It isunderstood, however, that the insulating layer can have many differentthicknesses as well. Thicker layers can provide the additional advantageof compensating for small manufacturing defects formed in the insulatinglayer during deposition. Thicker layers, however, can also reduce theability of the LED chip to spread heat from the sub-LEDs to thesubmount. Accordingly, there is a trade-off between defect tolerance andthermal dissipation when determining the best thickness for a particularLED chip.

Conductive bottom contact layers 72 a-c are included with each beingbetween a respective one of the sub-LEDs 62 a-c and the insulator layer70. Each of the bottom contacts 72 a-c comprises an electricallyconductive material to spread current to the bottom layer of each of thesub-LEDs 62 a-c, with suitable materials being those listed above forthe first and second contacts. The bottom contact layers 72 a-c can befabricated using known techniques such as sputtering or ebeamtechniques.

Some or all of the sub-LEDs 62 a-c can be coated with one or morephosphors with the phosphors absorbing at least some of the LED lightand emitting a different wavelength of light such that the LED emits acombination of light from the LED and the phosphor. This coating can beapplied to the sub-LEDs after separation of the sub-LEDs 62 a-c from thesingle junction as described above. Different embodiments according tothe present invention comprise white emitting sub-LEDs that emit lightin the blue wavelength spectrum with the phosphor absorbing some of theblue light and re-emitting yellow. The sub-LEDs 62 a-c emit a whitelight combination of blue and yellow light. In one embodiment thephosphor comprises commercially available YAG:Ce, although a full rangeof broad yellow spectral emission is possible using conversion particlesmade of phosphors based on the (Gd,Y)₃(Al,Ga)₅O₁₂:Ce system, such as theY₃Al₅O₁₂:Ce (YAG). Other yellow phosphors that can be used for whiteemitting LED chips include: Tb_(3-x)RE_(x)O₁₂:Ce (TAG); RE=Y, Gd, La,Lu; or Sr_(2-x-y)Ba_(x)Ca_(y)SiO₄:Eu.

It is understood that the different sub-LED 62 a-c can be coated withdifferent types of phosphors to absorb LED light and emit differentcolors of light. For example, different yellow, green or red phosphorscan be used that exhibit excitation in the blue and/or UV emissionspectrum. Many of these provide a desirable peak emission, haveefficient light conversion, and have acceptable Stokes shift.

The sub-LEDs 62 a-c can be coated with a phosphor using many differentmethods, with one suitable being described in U.S. patent applicationsSer. Nos. 11/656,759 and 11/899,790, both entitled “Wafer Level PhosphorCoating Method and Devices Fabricated Utilizing Method”, and both ofwhich are incorporated herein by reference. Alternatively the LEDs canbe coated using other methods such as electrophoretic deposition (EPD),with a suitable EPD method described in U.S. patent application Ser. No.11/473,089 entitled “Close Loop Electrophoretic Deposition ofSemiconductor Devices”, which is also incorporated herein by reference.It is understood that LED packages according to the present inventioncan also have multiple LEDs of different colors, one or more of whichmay be white emitting.

To allow for serial interconnection, each of the sub-LEDs 62 a-c canalso have first and second side insulators 74, 76. Each of the firstside insulators 74 provides electrical insulation between its one of thesub-LEDs 62 a-c and the contact or trace that carries an electricalsignal to the top surface of the sub-LEDs 62 a-c (e.g. the n-typelayer). This prevents the electrical signals applied to the top layersfrom shorting to unintended layers or contacts of the LEDs. For example,the first sub-LED 62 a has a top wire bond pad 78 that is in electricalcontact with one of the first sub-LEDs contacts. The first insulator 74on sub-LED 62 a electrically insulates the side surfaces and bottomcontact 72 a from the wire bond pad 78 so that an electrical signalapplied to the wire bond pad 78 spreads into the top layer of thesub-LED 62 a.

A first electrical connector trace 80 connects the bottom contact 72 afrom the first sub-LED 62 a to the top layer of the second sub-LED 62 b.The first insulator 74 on the second sub-LED 62 b electrically insulatesthe side surfaces of the second sub-LED 62 b from the first electricalconnector trace 80 so that an electrical signal from the bottom contact72 a spreads into the top surface of the second sub-LED 62 b. The firstside insulator layer 74 on the third sub-LED 62 c similarly insulatesthe side of the third sub-LED 62 c from the second electrical trace 82that connects the second sub-LED's bottom contact to the top surface ofthe third sub-LED 62 c.

The second side insulating layer 76 on the first sub-LED 62 a insulatesthe side surfaces of the first sub-LED 62 a from the first electricaltrace 80 to prevent shorting of the trace 80 to the first sub-LED 62 a.Similarly, the second side insulating layer 76 on the second sub-LED 62b prevents shorting of the second electrical trace 82 to the secondsub-LED 62 b. A second wire bond pad 84, is included on the bottomcontact 72 c for the third sub-LED 62 c, and the second side insulatinglayer 76 on the third sub-LED 62 c insulates the third sub-LED 62 c fromthe second wire bond pad 84. This arrangement of side insulators, bondpads, and electrical traces allows for an electrical signal applied tothe LED chip 60 to properly transmit serially through the sub-LEDs 62a-c. The side insulator layers 74, 76 can be made of many different suchas those used for the submount insulator layer 70, including but notlimited to SiN, AlN, SiO₂, TiO₂, or Al₂O₃, deposited using knowntechniques.

Each of the bottom contact layers 72 a-c can also comprise a mirrorcontact 86 adjacent the bottom surface of one or more of the sub-LEDs 62a-c. The mirror can cover the entire bottom surface of the sub-LEDs 62a-c or can cover less than the entire bottom surface so that it isaligned with the light emission opening of the each of the sub-LEDs topsurface (i.e. the portion of the top surface not covered by the wirebond pads, traces and insulating materials). The mirror contact 86 cancomprise many different materials such as reflective metals, or cancomprise reflective structures such as a distributed Bragg reflector(DBR). In addition to serving as an ohmic contact to the bottom layer ofthe sub-LEDs 62 a-c, each mirror is arranged to reflect light emittedfrom the active region of one of the sub-LED 62 a-c toward the submount64 so that the light contributes to useful emission from the top surfaceof its one of the sub-LEDs 62 a-c.

In operation, wire bonds can be coupled to the first and second wirebond pads 78, 84 so that an electrical signal can be applied to thesub-LEDs 62 a-c. The electrical signal passes through the first sub-LED62 a and is conducted to the second sub-LED 62 b along first electricaltrace 80. The signal passes through the second sub-LED 62 b and isconducted to the third sub-LED along second electrical trace 82. Thesignal then passes through the third sub-LED 62 c, with all the sub-LEDsemitting light in response to the electrical signal applied to the wirebond pads 78, 84.

FIG. 12 shows another embodiment of a monolithic LED chip 100 accordingto the present invention comprising a sub-LEDs 102 a-c. The LED chip 100has many of the similar features as the LED chip 60 and for thosesimilar features the same reference numbers will be used in describingthis embodiment (and subsequent embodiments) with the understanding thatthe description above is applicable to this embodiment. The LED chip 100comprises a submount 64, with a bond metal stack 68 and submountinsulator layer 70 arranged successively on the submount 64. Bottomcontacts 72 a-d are included with each one being between one of thesub-LEDs 102 a-c and the insulator layer 70.

The sub-LEDs 102 a-c can have the same features as sub-LEDs 62 a-cdescribed including the semiconductor layers, contacts, phosphors,buffer, nucleation, contact and current spreading layers as well aslight extraction layers and elements. The sub-LEDs 102 a-c can also beflip-chip mounted to the submount 64 as described above with thesub-LEDs 102 a-c separated from a single junction LED and seriallycoupled together. The sub-LEDs 102, however, have lateral geometryinstead of vertical geometry, such that the contacts for each of thesub-LEDs are accessible from each of the sub-LEDs bottom surface. In oneembodiment of a lateral geometry device, a portion of each of sub-LEDsp-type layer and active region is removed, such as by etching to exposea contact mesa on the n-type layer. A contact area is provided on themesa of the n-type layer such that the contacts the sub-LEDs arecontacted from the same side; the bottom surface in this case. Thecontacts are formed prior to being covered by the insulator layer 70,and prior to flip-chip mounting to the submount 64.

The bottom contact 72 a between the first sub-LED 102 a and theinsulator layer 70 comprises a first wire bond pad 78 arranged so thatan electrical signal applied to it spreads into the bottom contact 72 a.The electrical signal spreads from the bottom contact 72 a into firstsub-LED 102 a. The first contact mesa 104 a of first sub-LED 102 aoverlaps the second bottom contact 72 b and a first contact 106 a isarranged between contact mesa 104 a and the second bottom contact 72 b.An electrical signal at the first contact mesa 104 a conducts throughthe first contact 106 a to the second bottom contact 72 b. Theelectrical signal at the second bottom contact 72 b spreads into thesecond sub-LED 102 b. Similarly, the second contact mesa 104 b overlapsthe third bottom contact 72 c, and a second contact 106 b spreadscurrent from the second contact mesa 104 b to the third bottom contact72 c. The third bottom contact 72 c spreads to the third sub-LED 102 c.The third contact mesa 104 c overlaps the fourth bottom contact 72 d,and a third contact 106 c spreads current to the fourth bottom contact72d. A second wire bond pad 84 is on the fourth bottom contact 72 d.

Insulation regions 108 are included adjacent to the wire bond pads 78,84, and the first, second and third mesa contacts to insulate them fromthe adjacent semiconductor layers of the sub-LEDs 102 a-c. This preventsshorting of these features to undesirable layers of the sub-LEDs 102a-c. The insulator regions 108 can be made of the same material as theside insulators described above including but not limited to SiN, AlN,SiO₂, TiO₂, or Al₂O₃, deposited using known techniques.

Like the LED chip 60 described above, wire bonds can be coupled to wirebond pads 78, 84 and an electrical signal passes from the wire bond pads78, 84 serially through the sub-LEDs 102 a-c. A signal passes from wirebond pad 78 to the first bottom contact 72 a, through sub-LED 102 a andto the first contact mesa 104 a. The signal at the first contact mesa104 a spreads into the second bottom contact 72 b and continuessimilarly through sub-LEDs 102 b, 102 c to the second wire bond pad 84.The LED chip 100 is provided without the need for wire bonds orconductive traces covering the sub-LEDs 102 a-c.

FIG. 13 shows still another embodiment of an LED chip 130 according tothe present invention that has vertical geometry sub-LEDs 132 a-cserially fabricated and interconnected in the same way as the sub-LEDs62 a-c in LED chip 60 described above. In this embodiment, however, thesubmount 134 comprises an insulating material, and accordingly featuresdo not need to be included to insulate the sub-LEDs 132 a-c from thesubmount 134. Instead, the sub-LEDs can be mounted to the submount 134using a dielectric wafer bond layer 136 between the submount 134 and thesub-LEDs 132 a-c. An electrical signal spreads serially through thesub-LEDs 132 a-c from wafer bond pad 78, through the bottom contact 72a-c, through the first and second electrical traces 80, 82 and to thesecond wire bond pad 84. Because the submount 134 is insulating, theelectrical passing though these features does not short to the submount.Further, because the submount 134 is insulating the electrical breakdowncharacteristics of the dielectric layer 136 is less critical.

FIG. 14 shows still another embodiment of a monolithic LED chip 160according to the present invention that relies on other means toseparate the sub-LEDs 162 a-c. The sub-LEDs 162 a-c have lateralgeometry although this embodiment is equally applicable to verticalgeometry devices. The sub-LEDs 162 a-c are flip-chip mounted on asubmount 64, with a metal bond stack 68 and submount insulator layer 70.Each of the bottom contacts 72 a-d is arranged between the sub-LEDs 162a-c in a similar manner to the arrangement shown in LED chip 100 in FIG.12. A first wire bond pad 78 is on the bottom contact 72 a, and a secondwire bond pad 84 is on the bottom contact 72 d.

Instead of mechanical separation of the sub-LEDs 162 a-c from the singlejunction LED, the different regions are isolated electrically from oneanother using isolation implants to form insulating or semi-insulatingregions in the LED's semiconductor material. Different implants are alsoused to create conductive paths from through the LED's semiconductormaterial to allow for lateral geometry operation of the sub-LEDs withouthaving to form a contact mesa.

In the embodiment shown, first, second and third conductive implants 164a-c are included in the sub-LEDs 162 a-c, with each providing aconductive paths from one of the first, second and third bottom contacts72 b-c, respectively, to one of the doped layers within each of thesub-LEDs. For flip-chip sub-LEDs the conductive paths run from thebottom contacts 72 b-c to the n-doped layer. The conductive paths can beformed using n+ implanting of compounds such as silicon and oxygen,although other Group V or VI elements can also be used. Known ionimplanting methods can be used, and in some embodiments the n+implantmay require activation by annealing. The conductive implants 164 a-cprovide the advantage of having a conductive path to the n-dopedsemiconductor layer without having to form a contact mesa. It isunderstood, however, that this arrangement can also be used inembodiments having a contact mesa as described above.

Deep isolation implants 166 a, 166 b can be used to provide electricalisolation between the sub-LEDs 162 a-c, with each of the implantsextending through the semiconductor material of the LED. Many differentmaterials can be used for the isolation implant including, but notlimited to, nitrogen or iron. These implants 166 a, 166 b comprisesemi-insulating or insulating regions that block conduction betweenadjacent sub-LEDs in much that same way as mechanical separation.

Shallow isolation implants 168 a-c are provided in the sub-LEDs 162 a-cover each of the spaces between the bottom contacts 72 a-d with each ofthe shallow implants 168 a-c passing up through the bottom doped layerof its one of the sub-LED 162 a-c. In the embodiment shown the bottomdoped layer comprises the p-type doped layer. The shallow isolationimplants 168 a-c block electrical signals passing through each of thep-type layers from shorting to the conductive implants 164 a-c and theadjacent ones of the bottom contacts 72b-d. This provides a path for theelectrical signal through each of the sub-LEDs 162 a-c that causes themto emit, with the sub-LEDs 162 a-c electrically connected in seriesbetween the first and second wire bond pads 78, 84.

FIG. 15 shows still another embodiment of an LED 180 according to thepresent invention having sub-LEDs 182 a-c also relying on implants toform insulating or semi-insulating regions in the LED's semiconductormaterial and implants to create conductive paths. In this embodiment,however, the single junction LED comprises an insulating orsemi-insulating buffer layer 184. To form the necessary insulationbetween adjacent ones of the sub-LEDs 182 a-c isolation implants 186 a,186 b are included that pass through the semiconductor material to thebuffer layer. Current is blocked from passing between the sub-LEDs 182a-c by the isolation implants 186 a, 186 b and the buffer layer 184.Shallow isolation implants 188 a-c that are similar to the shallowisolation implants 168 a-c in LED chip 160, and also electricallyisolate the p-type layer from the n-contact. Conductive implants 190 a-care also included that are similar to conductive implants 164 a-c andprovide electrical connection to the n-type layer through othersemiconductor layers of the LED chip 180. This arrangement also providesa path for the electrical signal through each of the sub-LEDs 182 a-cthat causes them to emit, with the sub-LEDs 182 a-c electricallyconnected in series between the first and second wire bond pads 78, 84.

As mentioned above, one of the advantages of the present invention isits increased failure tolerance compared to single junction LED chips.Referring now to FIG. 16, a monolithic LED chip 210 is shown having aplurality of sub-LEDs 212 serially connected on a submount 214. Sub-LED212 a is shown as a sub-LED with a failed junction. When this sub-LEDjunction fails, the sub-LED 212 a may not emit light, but it can stillconduct such that the electrical signal applied to sub-LED 212 a willconduct to the remaining sub-LEDs that follow in the serial connection.The result is that all the sub-LEDs 212 can emit except the one failedsub-LED 212 a. In many applications the reduction in luminous flux froma single failed sub-LED can be acceptable. By contrast, when thejunction fails in a single junction LED chip, the device does not emitlight and cannot be used.

The present invention can be used in many different lightingapplication, and in particular those using a small sized high outputlight source. Some of these include, but are not limited to, streetlights, architectural lights, home and office lighting, display lightingand backlighting.

Although the present invention has been described in detail withreference to certain preferred configurations thereof, other versionsare possible. Therefore, the spirit and scope of the invention shouldnot be limited to the versions described above.

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 32. A LED chip, comprising: aplurality of sub-LEDs mounted on a submount, wherein said sub-LEDs areformed from a single junction LED; and electrically conductive andelectrically insulating features serially interconnecting said sub-LEDssuch that an electrical signal applied to said serially interconnectedsub-LEDs along said electrically conductive features spreads to saidserially interconnected sub-LEDs.
 33. The LED chip of claim 32, furthercomprising an insulator layer between said submount and said sub-LEDs.34. The LED chip of claim 32, wherein the voltage necessary to drivesaid sub-LEDs is dependent on the number of said serially interconnectedsub-LEDs and the junction voltage of said sub-LEDs.
 35. The LED chip ofclaim 32, wherein said sub-LEDs are formed from a single junction LED byremoving portions of said single junction LED.
 36. The LED chip of claim35, wherein said sub-LEDs are formed from a single junction LED byisolation implants.
 37. The LED chip of claim 35, wherein the activearea utilization ratio is greater than 50%.
 38. The LED chip of claim35, wherein the active area utilization ratio of said single junctionLED active region is greater than 75%.
 39. The LED chip of claim 32,wherein said sub-LEDs are flip-chip mounted on said submount.
 40. A LEDchip, comprising: a plurality of sub-LEDs mounted on a submount; aplurality of bottom contacts, each of which is between one of saidsub-LEDs and said submount; connector traces serially interconnectingsaid sub-LEDs; and insulating features to insulate portions of saidsub-LEDs from said connector traces.
 41. The LED chip of claim 40,wherein said the drive voltage is dependent on the number of saidserially interconnected sub-LEDs and the junction voltage of saidsub-LEDs.
 42. The LED chip of claim 40, further comprising an insulatinglayer between said sub-LEDs and said submount.
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